Preliminary Program

SILICON HETEROSTRUCTURES:
FROM PHYSICS TO DEVICES

15-19 September 1997
Il Ciocco Conference Center
Castelvecchio Pascoli (near Barga), Italy
Phone: 39-583-719-204 - Fax: 39-583-723-197

Conference Chair:

Thomas Pearsall
University of Washington, USA

Conference Co-Chair:

Florestano Evangelisti
University of Rome, Italy

Engineering Foundation
345 E. 47th Street New York, NY 10017
1-212-705-7836; fax: 1-212-705-7441
E-mail: engfnd@aol.com
World Wide Web: http://www.engfnd.org

Organizing Committee

Elizabetta Borsella (ENEA, Italy)
Francesco Califano (Universita di Roma, Italy)
Salvatore Campisano (University of Catania, Italy)
Florestano Evangelisti (Universita di Roma, Italy)
Fabrizio Galluzzi (Universita di Roma, Italy)
Stefano Lagomarsino (CNR, Italy)
Elia Palange (Universita "La Sapienza", Italy)
Thomas Pearsall (University of Washington, USA)

Scientific Program Committee

Chair: Gerhard Abstreiter (Walter Schottky Institut, Garching, Germany)
Gunther Bauer (J. Kepler University, Linz, Austria)
Maurizio Decrescenzi (University of Camerino, Camerino, Italy), Jacques Derrien (CRMC2-CNRS, Marseilles, France)
Erich Kasper (University of Stuttgart, Stuttgart, Germany)
Pantelis Kelires (University of Crete, Heraklion, Greece)
Lionel C. Kimerling (MIT, Cambridge, MA, USA)
Stefano Lagomarsino (CNR, Rome, Italy)
Bernard Meyerson (IBM, Yorktown Heights, NY, USA)
Abbas Ourmazd (Institute for Semiconductor Physics, Frankfurt am Oder, Germany)
Emmanuele Rimini (University of Catania, Italy)
J. Robert (CNRS, Montpellier, France)
Y. Shiraki (University of Tokyo, Tokyo, Japan)
James Sturm (Princeton Univ., Princeton, NJ, USA)

Go to Poster Program

Monday, September 15, 1997

17:00 - 19:00 Registration

19:00 - 21:00 Opening Dinner
Welcome from Conference Chair: Thomas Pearsall
Welcome from Engineering Foundation: Ari Aviram

21:00 - 22:00 Reception

22:00 Session Chairs Meeting

Tuesday, September 16, 1997

07:30 - 08:30 Breakfast

08:30 - 12:30 SESSION I: Epitaxial Growth-1
Session Chair: Florestano Evangelisti

08:30 - 09:00 J1
In-Situ Electron Microscope Studies of Strain Relaxation Processes in the GeSi/Si Systems
Robert Hull
University of Virginia, USA

09:00 - 09:15 A6
New Insights on SiGe Growth Instabilities
Isabelle Berbezier
CRMC2-CNRS, Marseille, France

09:15 - 09:30 A7
Graded SiGe Layers Obtained by KrF Excimer Laser- Assisted Chemical Vapour Deposition
Rosanna Larciprete
ENEA, Frascati, Italy

09:30 - 09:45 B2
Stabilizing the Surface Morphology of SiGeC/Si Heterostructures Grown by Molecular Beam Epitaxy Through the Use of a Silicon-Carbide Source
Edward Croke
Hughes Research Laboratories, Malibu, California, USA

09:45 - 10:00 B11
A New Strain-Relieving Microstructure in pure-Ge/Si Short Period Supperlattices Grown on Si(100)
Hiroshi Sunamura
University of Tokyo, Tokyo, Japan

10:00 - 10:30 Coffee Break

SESSION I: Epitaxial Growth-1 (continued)
Session Chair: Achim Barz

10:30 - 11:00 J2
X-ray analysis of interface roughness and diffusion
J.-M. Baribeau
National Research Council, Ottawa, Canada

11:00 - 11:30 B6
X-Ray Absorption at Ge L3-Edge as a Tool to Investigate Ge/Si Interfaces
Paola Castrucci
Università di Camerino, Camerini, Italy

11:30 - 11:45 B8
Characterization of Strained Si/Si1-yCy/Si1-xGex Structures Prepared by MBE
K.B. Joelsson
Linköping University, Linköping, Sweden

11:45 - 12:00 A11
Facet Investigation in Selective Epitaxial Growth of Si and SiGe on (001)Si for Electronic Devices
Lili Vescan
Forschungszentrum Jülich GmbH, Jülich, Germany

12:00 - 12:15 A13
Electrical and Optical Properties of SiGe/Si Quantum Well Structures Grown by Molecular Beam Epitaxy at Low Temperatures
D. Grützmacher
Paul-Scherrer Institute, Villigen, Switzerland

12:15 - 12:30 B14
Growth of SiC on Si(001): Morphology and Electronic Structure
C. Bittencourt
Università di Roma, Roma, Italy

12:30 - 13:45 Lunch

14:00 - 15:00 Wine Tasting

14:00 - 16:00 Ad hoc Discussions/Free Time

15:45 - Coffee Service in rear of Session Room

16:00 - 19:30 SESSION II: Si-Ge and Si-Ge-C Properties-1
Chair: Paola DePadova

16:00 - 16:30 J3
SiGeC: Bandgaps, Bandoffsets and Optical Properties
Karl Brunner
Walter Schottky Institute, Garching, Germany

16:30 - 16:45 D1
Absorption and Emission Spectroscopy of Intersubband Transitions in Si1-xGex/Si Quantum Wells
P. Boucaud
Université Paris XI, Orsay, France

16:45 - 17:00 C16
Electrical Properties of Two Dimensional Electron Gases Grown on Cleaned SiGe Virtual Substrates
Douglas J. Paul
University of Cambridge, Cambridge, United Kingdom

17:00 - 17:15 C14
Electronic Properties of Si/Si1-x-yGex-Cy Heterostructures
B.L. Stein
University of California at San Diego, La Jolla, USA

17:15 - 17:30 SESSION III: Quantum Structures - 1
Chair: Stefano Lagomarsino

17:15 - 17:45 J4
Self-Organized Nanoscale Structures in SiGe/Si Films and Multilayers
Max Lagally
University of Wisconsin-Madison, Madison, USA

17:45 - 18:15 Break

18:15 - 18:45 J5
Self assembled Ge-Dots: Growth, Characterization Ordering and Applications
Peter Schittenhelm
TU München, Garching, Germany

18:45 - 19:00 D18
Photoluminescence from Pure Ge/pure-Si Neighboring Confinement Structure
Noritaka Usami
University of Tokyo, Tokyo, Japan

19:00 - 19:15 B15
Equilibrium Properties of the Si1-xCx(100)(2x1) Surface
Pantelis C. Kelires
University of Crete, Crete, Greece

19:15 - 19:30 A3
In-Situ Study of Strain-Induced Step Bunching by Low Energy Electron Microscopy
Peter Sutter
University of Wisconsin, Madison, USA

20:00 - 22:00 Dinner

22:00 - 23:00 Social Hour

Wednesday, September 17, 1997

07:30 - 08:30 Breakfast

08:30 - 10:00 SESSION IV: Quantum Structures - 2
Chair: Martin Helm

08:30 - 09:00 J7
Novel electron and hole transport properties in strained Si and their applications
Khalid Ismail
IBM T.J. Watson Research Center, Yorktown Heights, NY, USA

09:00 - 09:15 D12/D5 (combined)
Important Role of Non-Radiative Defects in Si and SiGe/Si Structures Grown by Molecular Beam Epitaxy
Wei-min Chen
Linköping University, Linköping, Sweden
and
D12
On the Improvements in Thermal Quenching of Luminescence in SiGe/Si Structures Grown by Molecular Beam Epitaxy

09:15 - 09:30 D13
Physics and Light Emission Control in SiGe-Based Quantum Confined Structures
Susumu Fukatsu
University of Tokyo, Tokyo, Japan

09:30 - 10:00 J12
Transition-Metal/Silicon Interfaces
Shigeaki Zaima
Nagoya University, Nagoya, Japan

10:00 - 10:30 Coffee Break

10:30 - 11:30 SESSION V: Silicides-1
Chair: Peter Strauss

10:30 - 11:00 J6
Theory of FeSi2 Direct Gap Semiconductor on Silicon
Leo Miglio
Universitá di Milano, Milan, Italy

11:00 - 11:15 F9
Applications of Epitaxial Si/CoSi2/Si Heterostructures for Optoelectronic Devices
F. Ruders
Forschungszentrum Jülich, Jülich, Germany

11:15 - 11:30 B7
X-Ray Absorption Spectroscopy Study of Atomic Structure Epitaxial ErSi1.7(0001) on Si(111)
Roberto Gunnella
Universitá degli Studi di Camerino, Camerino, Italy

11:30 - 12:00 POSTER SESSION
All posters will be displayed for the entire conference
period. The poster list is provided at the end of the program.

12:00 - 14:00 Lunch

12:00 - 23:00 (Optional) Excursion to Florence (boxed lunches provided)
Dinner on your own in Florence

20:00 - 22:00 Dinner for those not on optional excursion

22:00 - 23:00 Social Hour

Thursday, September 18, 1997

07:30 - 08:30 Breakfast

08:30 - 09:30 SESSION XIV: SiC
Chair: Shigeaki Zaima

08:30 - 09:00 J13
State of the Art of 3C-SiC/SOI
J. Camassel
GES-USTL, Montpellier, France

09:00 - 09:15 A9
SiC Formation by Reaction of Si(001) with Acetylene: Electronic Structure and Growth Mode
Dufour
Université Pierre et Marie Curie, Paris, France

09:15 - 09:30 G11
Oxidation of Si1-yCy (0<y<0.02) Strained Layers Grown on Si(001)
Klaus Pressel
Institute for Semiconductor Physics, Frankfurt(Oder) Germany

09:30 - 10:15 SESSION XV: Si-Ge and Si-Ge-C properties-3

09:30 - 09:45 C5
Transport Properties of SiGe-based Heterostructures: Mobility-Limiting Mechanisms in n- and p-channels Structures
Akie Yutani
University of Tokyo, Tokyo, Japan

09:45 - 10:00 C1
Temperature Dependence of Mobility in n-type Short- period Si-Ge Superlattices
Thomas Pearsall
University of Washington, Seattle, USA

10:00 - 10:15 am C2
Cyclotron Resonance Measurements of Silicon/Silicon- Germanium Two-Dimensional Electron Gases with Varying Strain
Neil Griffin
University of Cambridge, Cambridge, United Kingdom

10:15 - 10:30 Coffee Break

10:30 - 11:30 SESSION XV: Applicatons of Si Heterostructures - 2
Chair: Wiley Kirk

10:30 - 10:45 E9
Device Design and Circuit Modeling Issues in UHV/CVD SiGe HBTs
John D. Cressler
Auburn University, Auburn, USA

10:45 - 11:00 E10
High Quality Si1-xGex-Channel MOSFETs Fabricated by Ultraclean Low-Temperature LPCVD
Junich Murota
Tohoku University, Sendai, Japan

11:00 - 11:15 E6
Low Frequency Noise Measurements of Si1-xGex Mosfets
Andrew Lambert
University of Warwick, Conventry, United Kingdom

11:15 - 11:30 C9
Electrical Influence of Carbon on the SiGeC Band-gap in W-p type Schottky Diodes
G. Bremond
INSA de Lyon, Villeurbanne, France

11:30 - 13:00 POSTER SESSION 2

13:00 - 14:30 Lunch

14:00 - 16:00 ad hoc discussions/Free Time

15:45 Coffee Service at rear of session room

16:00 - 17:45 SESSION XV: Applications of Si Heterostructures - 2
Chair: Lorenzo Colace

16:00 - 16:30 J14
Normal incidence p-type Si/Si/Ge Infrared Detectors
Martin Helm
University of Linz, Austria

16:30 - 16:45 F16
Heterostructures for Monolithic Silicon Microphotonics
J. Foresi
Massachusetts Institute of Technology, Cambridge, USA

16:45 - 17:00 F17
Thick Pure Ge Films for Photodetectors
F. Scarinci
IESS-CNR-V, Rome, Italy

17:00 - 17:15 D14
Visible Light from Si/SiO2 Superlattices in Optical Microcavities
Lockwood/presented by J.-M. Baribeau
National Research Council of Canada, Ottawa, Canada

17:15 - 17:30 G12
Novel Light Emitting Devices Based on Silicon Nanocrystallites in Si/CaF2 Multilayers
V. Ioannou-Sougleridis
NCSR Demokritos, Athens, Greece

17:30 - 17:45 D11
Luminescence from Erbium Implanted Si-Ge Quantum Wells
M.Q. Huda
University of Manchester, Manchester, United Kingdom

17:45 - 18:00 Break

18:00 - 19:30 SESSION XVI: Applicatons of Si Heterostructures - 32
Session Chair: Juan Roldan

18:00 - 18:45 F8
Progress Toward Silicon-Based Intersubband Lasers
R.A. Soref
USAF Rome Laboratory, Massachusetts, USA

18:45 - 18:30 D17
Mechanisms and Device Applications of Light Emitting Phenomena of Si/Si1-x-Gex/Si Quantum Wells
Masanobu Miyao
Hitachi Ltd., Tokyo, Japan

18:30 - 18:45 D10
Electronic Structure of Amorphous Silicon Slabs
Guy Allan
IEMN, Villeneuve D'Ascq, France

18:45 - 19:00 F1
Opto-elelectronic Storage Effects in Self-Assembled Ge Dots on Si
Cornelia Engel
TU München, Garching, Germany

19:00 - 19:15 F14
Erbium-silicon light emitting diodes grown by MBE
Eduard Neufeld
TU München, Garching, Germany

19:15 - 19:30 F3
Mid Infrared Silicon/Germanium Based Photodetection
Hermut Presting
Daimler-Benz Research Center, Ulm, Germany

19:30 - Conference Dinner: Rustic Italian Dinner "Up the Mountain"
with Music

Bus leaves at 20:00 SHARP

Friday, September 19, 1997

07:30 - 08:30 Breakfast

08:30 - 12:45 SESSION XVII: Device Technologies
Session Chair: Junichi Murota

08:30 - 09:00 J9
Issues in SiGe HBT BiCMOS Technology
David Harame
IBM, Essex Junction, Vermont, USA

09:00 - 09:15 E7
Effects of Carbon on Boron Diffusion in SiGe: Principles and Impact on Bipolar Devices
H. Joerg Osten
Institute for Semiconductor Physics, Frankfurt (Oder), Germany

09:15 - 09:30 E11
Controlling TED Effects in High Frequency Si0.7Ge0.3 HBTs with Implanted Emitters
Lisk K. Nanver
Delft University of Technology, Delft, The Netherlands

09:30 - 09:45 LATE NEWS

09:45 - 10:00 E12
A 84GHz-fT Polysilicon-Emitter and SiGe-Base HBT Using Reduced Pressure CVD
Byung Ryul Ryum
Electronics and Telecommunications Research, Taejon, Korea

10:00 - 10:30 J10
High-speed Si-Ge Product Applications
Lawrence Larson
University of California-LaJolla, USA

10:30 - 11:00 Coffee Break

SESSION XVII: Device Technologies (continued)
Session Chair: Hartmut Presting

11:00 - 11:15 J11
SiGe HBT Integrated on CMOS
D. Temmler
Institut fur Halbleitertechnik, Frankfurt (Oder), Germany

11:15 - 11:30 E13
Resonant Transconductance of Heterostructure Bipolar Transistors with an Induced Base
Victor Ryzhii
University of Aizu, Aizu-Wakamatsu City, Japan

11:30 - 11:45 E3
Suppression of the Base-Collector Leakage Current in Integrated Si/SiGe Heterojunction Bipolar Transistors
Elisabeth de Berranger
CNET-CNS, France Telecom, Meylan, France

11:45 - 12:00 E5
Investigation of Process Induced Defects in Si/Ge/Si HBTs by Deep Level Transient Spectroscopy
A. Souifi
INSA de Lyon, Villeurbanne, France

12:00 - 12:30 J8
Si/SiGe field effect transistors
Ulf Konig
Dalmler-Benz Forschungszentrum, Germany

12:30 - 14:00 Closing Lunch

14:00 Bus Departure to Pisa

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POSTER PROGRAM

SESSION VI: POROUS Si

G5
Surface of Porous Silicon Studied by Positron Annihilation Spectroscopy-Lifetime, Doppler Broadening and Age-Momentum Correlation
Hideoki Murakami
Tokyo Gakugei University, Japan

F11
Silicon Integrated Optical Link based on Porous Silicon
S. La-Monica
INFM, University of Rome "La Sapienza", Italy

D15
Analysis of Steady-State and Time Resolved Visible Photoluminescence from Porous SiGe
B. Ünal
De Montfort University, Leicester, England

B5
High Resolution x-ray Characterization of the Porous Boron d-Doped
Si superlattice

Ting-Chang Chang
National Nanodevices Laboratory
Taiwan, China

SESSION VII: APPLICATIONS OF Si HETEROSTRUCTURES - 1

E1
Electrical Characterization of Si1-xGex PMOS Channel by Admittance Spectroscopy
J. Alieu, A. Souifi*, P. Bouillon, T. Skotnicki and G. Bremond*
INSA de Lyon, Villeurbanne, France
* INSA de Lyon

F7
A Heterojunction Internal Photoemission Photodiode with Polycrystalline SiGe/Si Emitter
Rolf Banisch
Institute for Seminconductor Physics
Frankfurt (Oder), Germany

E8
Oxide Charge Fluctuation Model for Low Frequency Noise in the State of the Art Silicon Microelectronic Devices
Jan Chroboczek
France Telecom, Meylan, France

F4
Voltage-tunable near Infra-red Photodetector: A Versatile Tool for Optical Communication Systems
Lorenzo Colace*, G. Masini, G. Assanto, T.P. Pearsall, and H. Presting
*University of Rome, Italy

E4
Hydrodynamical Modeling of Abrupt and Graded Heterojunctions for Evaluation of Advanced Heterostructure Devices
Nadine Collaert
IMEC, Leuven, Belgium

E15
Fabrication of 3-d MOS Devices for Highly Integrated Circuits
J. Gondermann

B9
Development of Wide Bandgap Zn S/Si and Bete/Si Heterostructures for Silicon-based Electronic Devices
Wiley Kirk
Texas A&M University, USA

E14
Si/GexSi1-x Heterojunction Bipolar Transistors with Heterostructure formed by Ge Ion Implantation
Salvo Lombardo
CNR-IMETEM, Catania, Italy

C10
Two-dimensional Drift-Diffusion Simulation of Superficial Strained Si/Si1xGex Channel MOSFETs
Juan Roldan
University of Granada, Spain

C15
Investigation of Silicon Based Heterojunctions by Photoinjection
Manfred Schmidt
Hahn-Meitner Institute, Berlin, Germany

F12
Ultra Sensitive Photoresponse in Modulation Doped Si/GeSi/Ge/GeSi Heterostructures
M. Vijayaraghavan
Indian Institute of Science, Bangalore, India

SESSION VIII: Er-DOPED Si AND CaF2/Si MATERIALS

D6
Properties of Er-Related Emission in In-Situ Doped Si Epilayers Grown by Molecular Beam Epitaxy
Irina Buyanova
Linkoping University, Sweden

F6
Erbium Doped Light Emitting Silicon: Physics and Devices
Giorgia Franzo
CNR-IMETEM, Cantania, Italy

D9
The Role of Post Growth Treatments on the Optical Properties of Nanocrystalline Si/CaF2 Multilayers
Stephane Menard
CRMC2-CNRS, Marseille, France

F15
Energy Transfer Processes and Frequency Response of Er/O Doped Si Light Emitting Devices
Wei-Xin Ni
Linkoping University, Sweden

SESSION IX: QUANTUM STRUCTURES - 3

D2
Investigation of Ge on Si(100) Quantum wells by Photoelectron Spectroscopies
L. DiGaspare, G. Capellini, E. Cianci, and F. Evangelisti
Unita INFM, University of Rome, Italy

C17
Electronic Structure of no-i-pi Silicon Superlattices
M. DiVentra

A10
Fabrication of Si-Ge Quantum Dots: A New Approach Based on Selective Epitaxy on H-Passivates Si(100) Surface
Vihn LeThanh
University of Paris-Sud, France

A2
STM Studies of Ge/Si Films on Si(111): from Layer by Layer to Quantum Dots
Nunzio Motta, A. Sgarlata, R. Calarco, Q. Nguyen, J. Castro Cal, P. Prosposito, and A. Balzarotti
University of Rome (Tor Vergata), Rome, Italy;
M. De Crescenzi
University of Camerino, Italy

C3
Study of Peculiarities on the Holes Spectrum in Ge Quantum Wells Ge-GeSi Heterostructures
Lev Orlov
Russian Academy of Sciences, Moscow, Russia

A8
Self Assembled Ge and SiGe Dots Grown by MBE
N. Pinto
University of Camerino, Italy

D16
Enhancement of Luminescence in Amorphous Si Microcavities
Ali Serpenguzel
Bilkent University, Turkey

SESSION X: EPITAXIAL GROWTH - 2

G7
Germanium-rich Si-Ge Bulk Single Crystals Grown by the Vertical Bridgman Method
Achim Barz
Alfred-Ludwigs University, Freiburg, Germany

D8
Effect of Hydrogenation on Misfit Dislocations in SiGe/Si Structures
Anis Daami
INSA de Lyon, Villeurbanne, France

G6
The Sb-Ge Site Exchange Process in Surfactant Mediated Epitaxy on Si(001) Studied by High Resolution Core-level Spectroscopy
Paola DePadova
CNR-ISM, Frascati-RM-, Italy

A5
Kinetic Surface Roughening in Low Temperature MBE Growth
Bruno Gallas, I.Berbezier and J. Derrien
CRMC2-CNRS, Marseille, France;
D. Ganbdolfo, J. Ruiz, and V.A. Zagrebnov
CNRS. Marseille, France

B4
Strain Relaxation in Graded Si1-xGex Buffers on Si Substrates
J.H. Li
University of Linz, Austria

G3
Atomic Force Microscopy Study of the Morphological Modifications Induced by Laser Processing of Si(1-x)-Gex/Si Samples
Giuseppina Padeletti
CNR-ICMAT, Monterotondo, Italy

SESSION XI: Si-Ge AND Si-Ge-C PROPERTIES - 2

C8
Hole Transport Investigation in Unstrained and Strained SiGe
Fabian Bufler
University of Bremen, Germany

B13
2-D Electron Gas Mobility as a Function of Virtual Substrate Quality in Strained Si/SiGe Heterojunctions
Alexander Churchill, D.J. Robbins, D.J. Wallis, N. Griffin, D.J. Paul, A.J. Pidduck, W. Y. Leong, and G.M. Williams
Defense Evaluation and Research Agency, Worcestshire, UK

B10
Structural and Electrical Characterization of Si1-xGex/Si Alloys for Near Infrared Photodetector Devices
Paola DePadova
CNR-ISM, Frascati-RM-, Italy

D7
Optical Investigation of Si and Ge rich SiGe Bulk Crystals
Markus Franz
Institute for Semiconductor Physics, Frankfurt, Germany

D3
A Comparison of Temperature Dependence of Electroluminescence and Photoluminescence Mecahnisms in Si-Si1-xGex Quantum Dots
Tamim Sidiki
University of Wuppertal, Germany

F10
Electroluminescence and Photocurrent Spectra of SiGe/Si Diodes
Toma Stoica
National Institute for Material Physics, Bucharest, Romania

SESSION XII: Si-Ge-C AND SiC PROPERTIES

C6
Contacts on Si1-x-yGxCy Alloys: Electrical Properties and Thermal Stability
Valerie Aubry-Fortuna
University of Paris, France

B1
Band Alignments in Si1-xGex/Si(001), Si1-yCy/Si(001) and Si1-yCy/Si1-xGex/Si(001) Heterostructures: Comparision of Theory with Photoluminescence under Applied Uniaxial Stress
Robin Williams
National Research Council of Canada, Ottawa, Canada

C18
Electronic Properties of Si/SiGeC Heterostructures
Edward Yu
University of California-La-Jolla, USA

C12
Electron Mobility in Quantized B-SiC Inversion Layers
Francisco Gamiz
University of Granada, Spain

G4
Morphological Properties of the 6H-SiC (0001) surface
Roberto Gunnella
University of Camerino, Italy

D19
Photoluminescence from Pseudomorphic Si1-y-Cy Layers on a Si Substrate
Christian Penn, S. Zerlauth, J. Stangl, G. Bauer and F. Schaffler
University of Linz, Austria

G8
Acetylene on Si(111)-7x7: an XPS and XAS study with Synchrotron Radiation
Francois Rochet
University of Pierre & Marie Curie, Paris, France

D4
Defect Structure, Distribution and Dynamic in Diamond-on-Silicon Optoelectronic Devices
M.C. Rossi, S. Salvatori and F. Galluzi
University of Rome, Italy

A12
Temperature Dependent Carbon Incorporation during MBE Growth of Si1-yCy Layers
Stefan Zerlauth
University of Linz, Austria

SESSION XIII: SILICIDES - 2

C4
Monte Carlo Studies of Internal Photoemission Mechanisms in Metal-Silicon Structures
Manfred Brauer
Han-Meitner-Institute, Berlin, Germany

F5
Metal-Ge-Si Diodes for Near Infra-red Light Detection
Lorenzo Colace
University of Rome, Italy

C7
Transport Properties of Unitentionally Doped Iron Silicide Thin Films on Silicon (111)
P. Muret, I. Ali
Laboratoire d'Etudes des Proprietes, Electroniques des Solides, CNRS, Grenoble, France

G2
B-FeSi2/Si Heterojunctions Grown from Fe Sources of Different Purity
Peter Strauss
Hahn-Meitner Institute, Berlin, Germany

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